Semiconductor memory device and method for gating the columns thereof

Disclosed is a semiconductor memory device with a block write function for reading and writing data in a unit of two bytes, which comprises a plurality of memory cell blocks for associating bits accessed in response to a column address to designate the upper one of the two bytes and bits accessed in...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SON, MOON-HOI, JUNG, SEONG-OOK, PARK, CHUROO
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	SON MOON-HOI JUNG SEONG-OOK PARK CHUROO
description	Disclosed is a semiconductor memory device with a block write function for reading and writing data in a unit of two bytes, which comprises a plurality of memory cell blocks for associating bits accessed in response to a column address to designate the upper one of the two bytes and bits accessed in response to a column address to designate the lower one of the two bytes, at least two column select lines enabled in response to same column addresses, and a control circuit for separately controlling the two column select lines, wherein the bits of the upper and lower bytes stored in the memory cell blocks are all outputted in response to the column addresses.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5579280A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5579280A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5579280A3</originalsourceid><addsrcrecordid>eNrjZHANTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLAYqUZOSnKKQBJdMTSzLz0hVKMlIVkvNzSnPzikHsotT8NB4G1rTEnOJUXijNzSDv5hri7KGbWpAfn1pckJicmpdaEh8abGpqbmlkYeBoTFgFAEyEMso</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory device and method for gating the columns thereof</title><source>esp@cenet</source><creator>SON; MOON-HOI ; JUNG; SEONG-OOK ; PARK; CHUROO</creator><creatorcontrib>SON; MOON-HOI ; JUNG; SEONG-OOK ; PARK; CHUROO</creatorcontrib><description>Disclosed is a semiconductor memory device with a block write function for reading and writing data in a unit of two bytes, which comprises a plurality of memory cell blocks for associating bits accessed in response to a column address to designate the upper one of the two bytes and bits accessed in response to a column address to designate the lower one of the two bytes, at least two column select lines enabled in response to same column addresses, and a control circuit for separately controlling the two column select lines, wherein the bits of the upper and lower bytes stored in the memory cell blocks are all outputted in response to the column addresses.</description><edition>6</edition><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961126&DB=EPODOC&CC=US&NR=5579280A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19961126&DB=EPODOC&CC=US&NR=5579280A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SON; MOON-HOI</creatorcontrib><creatorcontrib>JUNG; SEONG-OOK</creatorcontrib><creatorcontrib>PARK; CHUROO</creatorcontrib><title>Semiconductor memory device and method for gating the columns thereof</title><description>Disclosed is a semiconductor memory device with a block write function for reading and writing data in a unit of two bytes, which comprises a plurality of memory cell blocks for associating bits accessed in response to a column address to designate the upper one of the two bytes and bits accessed in response to a column address to designate the lower one of the two bytes, at least two column select lines enabled in response to same column addresses, and a control circuit for separately controlling the two column select lines, wherein the bits of the upper and lower bytes stored in the memory cell blocks are all outputted in response to the column addresses.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE5VSMxLAYqUZOSnKKQBJdMTSzLz0hVKMlIVkvNzSnPzikHsotT8NB4G1rTEnOJUXijNzSDv5hri7KGbWpAfn1pckJicmpdaEh8abGpqbmlkYeBoTFgFAEyEMso</recordid><startdate>19961126</startdate><enddate>19961126</enddate><creator>SON; MOON-HOI</creator><creator>JUNG; SEONG-OOK</creator><creator>PARK; CHUROO</creator><scope>EVB</scope></search><sort><creationdate>19961126</creationdate><title>Semiconductor memory device and method for gating the columns thereof</title><author>SON; MOON-HOI ; JUNG; SEONG-OOK ; PARK; CHUROO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5579280A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>SON; MOON-HOI</creatorcontrib><creatorcontrib>JUNG; SEONG-OOK</creatorcontrib><creatorcontrib>PARK; CHUROO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SON; MOON-HOI</au><au>JUNG; SEONG-OOK</au><au>PARK; CHUROO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory device and method for gating the columns thereof</title><date>1996-11-26</date><risdate>1996</risdate><abstract>Disclosed is a semiconductor memory device with a block write function for reading and writing data in a unit of two bytes, which comprises a plurality of memory cell blocks for associating bits accessed in response to a column address to designate the upper one of the two bytes and bits accessed in response to a column address to designate the lower one of the two bytes, at least two column select lines enabled in response to same column addresses, and a control circuit for separately controlling the two column select lines, wherein the bits of the upper and lower bytes stored in the memory cell blocks are all outputted in response to the column addresses.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US5579280A
source	esp@cenet
subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	Semiconductor memory device and method for gating the columns thereof
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T04%3A57%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SON;%20MOON-HOI&rft.date=1996-11-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5579280A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true