Method of making in-containing III/V semiconductor devices

In-containing III/V semiconductor materials (e.g., InGaP) can be dry etched in BCl3 in ECR apparatus. We have discovered that addition of N2 to the BCl3 can result in substantially higher etch rate (e.g., more than 50% higher). Etching is substantially without incubation period, and the resulting su...

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Bibliographische Detailangaben

Hauptverfasser:	LOPATA, JOHN, REN, FAN, HOBSON, WILLIAM S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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