Semiconductor laser

A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a ZnxMg1-xSySe1-y compound semiconductor where 0

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KANAMARU, SHOJI, IMANAGA, SHUNJI, OKUYAMA, HIROYUKI, ISHIBASHI, AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	KANAMARU SHOJI IMANAGA SHUNJI OKUYAMA HIROYUKI ISHIBASHI AKIRA
description	A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a ZnxMg1-xSySe1-y compound semiconductor where 0
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5506855A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5506855A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5506855A3</originalsourceid><addsrcrecordid>eNrjZBAOTs3NTM7PSylNLskvUshJLE4t4mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBpqYGZhampo7GhFUAAMIDH_4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor laser</title><source>esp@cenet</source><creator>KANAMARU; SHOJI ; IMANAGA; SHUNJI ; OKUYAMA; HIROYUKI ; ISHIBASHI; AKIRA</creator><creatorcontrib>KANAMARU; SHOJI ; IMANAGA; SHUNJI ; OKUYAMA; HIROYUKI ; ISHIBASHI; AKIRA</creatorcontrib><description>A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a ZnxMg1-xSySe1-y compound semiconductor where 0</=x<1 and 0</=y</=1 excluding ranges of 1.2y-2.2x>/=1, 1.3y-3.9x>/=1, x>/=0, and y</=1 by an n-type cladding layer and a p-type cladding layer from opposite sides.</description><edition>6</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>1996</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960409&DB=EPODOC&CC=US&NR=5506855A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19960409&DB=EPODOC&CC=US&NR=5506855A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANAMARU; SHOJI</creatorcontrib><creatorcontrib>IMANAGA; SHUNJI</creatorcontrib><creatorcontrib>OKUYAMA; HIROYUKI</creatorcontrib><creatorcontrib>ISHIBASHI; AKIRA</creatorcontrib><title>Semiconductor laser</title><description>A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a ZnxMg1-xSySe1-y compound semiconductor where 0</=x<1 and 0</=y</=1 excluding ranges of 1.2y-2.2x>/=1, 1.3y-3.9x>/=1, x>/=0, and y</=1 by an n-type cladding layer and a p-type cladding layer from opposite sides.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1996</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAOTs3NTM7PSylNLskvUshJLE4t4mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBpqYGZhampo7GhFUAAMIDH_4</recordid><startdate>19960409</startdate><enddate>19960409</enddate><creator>KANAMARU; SHOJI</creator><creator>IMANAGA; SHUNJI</creator><creator>OKUYAMA; HIROYUKI</creator><creator>ISHIBASHI; AKIRA</creator><scope>EVB</scope></search><sort><creationdate>19960409</creationdate><title>Semiconductor laser</title><author>KANAMARU; SHOJI ; IMANAGA; SHUNJI ; OKUYAMA; HIROYUKI ; ISHIBASHI; AKIRA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5506855A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1996</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>KANAMARU; SHOJI</creatorcontrib><creatorcontrib>IMANAGA; SHUNJI</creatorcontrib><creatorcontrib>OKUYAMA; HIROYUKI</creatorcontrib><creatorcontrib>ISHIBASHI; AKIRA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KANAMARU; SHOJI</au><au>IMANAGA; SHUNJI</au><au>OKUYAMA; HIROYUKI</au><au>ISHIBASHI; AKIRA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor laser</title><date>1996-04-09</date><risdate>1996</risdate><abstract>A semiconductor laser using II-VI compound semiconductors and capable of emitting blue to ultraviolet light is disclosed. The semiconductor laser is configured to sandwich an active layer made of a ZnxMg1-xSySe1-y compound semiconductor where 0</=x<1 and 0</=y</=1 excluding ranges of 1.2y-2.2x>/=1, 1.3y-3.9x>/=1, x>/=0, and y</=1 by an n-type cladding layer and a p-type cladding layer from opposite sides.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US5506855A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
title	Semiconductor laser
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T00%3A19%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KANAMARU;%20SHOJI&rft.date=1996-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5506855A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true