COMFET switch and method

COMFET switch and method

The performance of COMFET-based electrical switches may be improved by connecting a MOSFET substantially in parallel with the COMFET. In a monolithic embodiment, a MOSFET drain region may be added to a surface of a COMFET and shorted to the emitter region of the COMFET. The invention decreases the t...

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Hauptverfasser: DIETZ, WOLFGANG F. W, NEILSON, JOHN M. S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator DIETZ
WOLFGANG F. W
NEILSON
JOHN M. S
description The performance of COMFET-based electrical switches may be improved by connecting a MOSFET substantially in parallel with the COMFET. In a monolithic embodiment, a MOSFET drain region may be added to a surface of a COMFET and shorted to the emitter region of the COMFET. The invention decreases the turn-off time of the COMFET, reduces the discontinuity at current direction reversal and increases the latch-up current of a semiconductor switch.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title COMFET switch and method
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