Trench isolation stress relief

Trench isolation stress relief

In a microelectronic device formed on a substrate 12, a pair of trenches 30, 36 branch at their intersection to provide branches 31-34 surrounding a sacrificial island 42. Sacrificial island 42 may comprise substrate material or other material or a void for absorbing the axial stresses propagated al...

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Hauptverfasser: GAUL, STEPHEN J, HEMMENWAY, DONALD F
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator GAUL
STEPHEN J
HEMMENWAY
DONALD F
description In a microelectronic device formed on a substrate 12, a pair of trenches 30, 36 branch at their intersection to provide branches 31-34 surrounding a sacrificial island 42. Sacrificial island 42 may comprise substrate material or other material or a void for absorbing the axial stresses propagated along the lengths of trenches 30, 36.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Trench isolation stress relief
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