Reference element for high accuracy silicon capacitive pressure sensor

A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a h...

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Hauptverfasser: GOBETZ, FRANK W, BULLIS, ROBERT H, WIEGAND, WALTER J
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creator GOBETZ
FRANK W
BULLIS
ROBERT H
WIEGAND
WALTER J
description A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a header using identical mounting steps. Such identical fabrication and mounting steps serve to identically match the dielectric materials and, thus, the aging properties of both the sensing and reference elements. By matching the sensing and reference elements in these ways, and by aging these components at elevated temperatures in exactly the same way, it is possible to achieve an extremely close match in long-term dielectric aging properties.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5440931A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5440931A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5440931A3</originalsourceid><addsrcrecordid>eNqFy7sKAjEQRuE0FqI-g_MCgrJrYbmIi7WXehmGP24gJmEmK_j2WthbneY7c9df4KFIAkLEE6mSz0pjeIzEIpOyvMlCDJITCReWUMMLVBRmk4IMybIu3cxzNKx-Xbh1f7odzxuUPMC-GxLqcL_u23Z7aHZd8198AI3-M1M</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Reference element for high accuracy silicon capacitive pressure sensor</title><source>esp@cenet</source><creator>GOBETZ; FRANK W ; BULLIS; ROBERT H ; WIEGAND; WALTER J</creator><creatorcontrib>GOBETZ; FRANK W ; BULLIS; ROBERT H ; WIEGAND; WALTER J</creatorcontrib><description>A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a header using identical mounting steps. Such identical fabrication and mounting steps serve to identically match the dielectric materials and, thus, the aging properties of both the sensing and reference elements. By matching the sensing and reference elements in these ways, and by aging these components at elevated temperatures in exactly the same way, it is possible to achieve an extremely close match in long-term dielectric aging properties.</description><edition>6</edition><language>eng</language><subject>MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; PHYSICS ; TESTING</subject><creationdate>1995</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19950815&amp;DB=EPODOC&amp;CC=US&amp;NR=5440931A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19950815&amp;DB=EPODOC&amp;CC=US&amp;NR=5440931A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOBETZ; FRANK W</creatorcontrib><creatorcontrib>BULLIS; ROBERT H</creatorcontrib><creatorcontrib>WIEGAND; WALTER J</creatorcontrib><title>Reference element for high accuracy silicon capacitive pressure sensor</title><description>A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a header using identical mounting steps. Such identical fabrication and mounting steps serve to identically match the dielectric materials and, thus, the aging properties of both the sensing and reference elements. By matching the sensing and reference elements in these ways, and by aging these components at elevated temperatures in exactly the same way, it is possible to achieve an extremely close match in long-term dielectric aging properties.</description><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1995</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFy7sKAjEQRuE0FqI-g_MCgrJrYbmIi7WXehmGP24gJmEmK_j2WthbneY7c9df4KFIAkLEE6mSz0pjeIzEIpOyvMlCDJITCReWUMMLVBRmk4IMybIu3cxzNKx-Xbh1f7odzxuUPMC-GxLqcL_u23Z7aHZd8198AI3-M1M</recordid><startdate>19950815</startdate><enddate>19950815</enddate><creator>GOBETZ; FRANK W</creator><creator>BULLIS; ROBERT H</creator><creator>WIEGAND; WALTER J</creator><scope>EVB</scope></search><sort><creationdate>19950815</creationdate><title>Reference element for high accuracy silicon capacitive pressure sensor</title><author>GOBETZ; FRANK W ; BULLIS; ROBERT H ; WIEGAND; WALTER J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5440931A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1995</creationdate><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>GOBETZ; FRANK W</creatorcontrib><creatorcontrib>BULLIS; ROBERT H</creatorcontrib><creatorcontrib>WIEGAND; WALTER J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOBETZ; FRANK W</au><au>BULLIS; ROBERT H</au><au>WIEGAND; WALTER J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Reference element for high accuracy silicon capacitive pressure sensor</title><date>1995-08-15</date><risdate>1995</risdate><abstract>A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a header using identical mounting steps. Such identical fabrication and mounting steps serve to identically match the dielectric materials and, thus, the aging properties of both the sensing and reference elements. By matching the sensing and reference elements in these ways, and by aging these components at elevated temperatures in exactly the same way, it is possible to achieve an extremely close match in long-term dielectric aging properties.</abstract><edition>6</edition><oa>free_for_read</oa></addata></record>
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subjects MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
title Reference element for high accuracy silicon capacitive pressure sensor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T09%3A56%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GOBETZ;%20FRANK%20W&rft.date=1995-08-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5440931A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true