Process for etching titanium at a controllable rate
A process for removing titanium from a device is disclosed. The titanium is etched at a controllable rate. The etchant oxidizes the titanium, and the oxidized titanium forms a complex in the etchant. When the concentration of this complex in the etchant nears its solubility limit, it precipitates an...
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| creator | TAKAHASHI KEN M HANSON KARRIE JO SAPJETA BARBARA J |
| description | A process for removing titanium from a device is disclosed. The titanium is etched at a controllable rate. The etchant oxidizes the titanium, and the oxidized titanium forms a complex in the etchant. When the concentration of this complex in the etchant nears its solubility limit, it precipitates and forms a film on the titanium metal surface. This film reduces the rate of the etch, enabling the amount of titanium removed by the etchant to be controlled. |
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The etchant oxidizes the titanium, and the oxidized titanium forms a complex in the etchant. When the concentration of this complex in the etchant nears its solubility limit, it precipitates and forms a film on the titanium metal surface. This film reduces the rate of the etch, enabling the amount of titanium removed by the etchant to be controlled.</description><edition>5</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PRINTED CIRCUITS ; SEMICONDUCTOR DEVICES</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941227&DB=EPODOC&CC=US&NR=5376236A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941227&DB=EPODOC&CC=US&NR=5376236A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAHASHI; KEN M</creatorcontrib><creatorcontrib>HANSON; KARRIE JO</creatorcontrib><creatorcontrib>SAPJETA; BARBARA J</creatorcontrib><title>Process for etching titanium at a controllable rate</title><description>A process for removing titanium from a device is disclosed. The titanium is etched at a controllable rate. The etchant oxidizes the titanium, and the oxidized titanium forms a complex in the etchant. When the concentration of this complex in the etchant nears its solubility limit, it precipitates and forms a film on the titanium metal surface. This film reduces the rate of the etch, enabling the amount of titanium removed by the etchant to be controlled.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PRINTED CIRCUITS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAOKMpPTi0uVkjLL1JILUnOyMxLVyjJLEnMyyzNVUgsUUhUSM7PKynKz8lJTMpJVShKLEnlYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGmxuZmRsZmjsaEVQAATkcrug</recordid><startdate>19941227</startdate><enddate>19941227</enddate><creator>TAKAHASHI; KEN M</creator><creator>HANSON; KARRIE JO</creator><creator>SAPJETA; BARBARA J</creator><scope>EVB</scope></search><sort><creationdate>19941227</creationdate><title>Process for etching titanium at a controllable rate</title><author>TAKAHASHI; KEN M ; HANSON; KARRIE JO ; SAPJETA; BARBARA J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5376236A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PRINTED CIRCUITS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAHASHI; KEN M</creatorcontrib><creatorcontrib>HANSON; KARRIE JO</creatorcontrib><creatorcontrib>SAPJETA; BARBARA J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAHASHI; KEN M</au><au>HANSON; KARRIE JO</au><au>SAPJETA; BARBARA J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Process for etching titanium at a controllable rate</title><date>1994-12-27</date><risdate>1994</risdate><abstract>A process for removing titanium from a device is disclosed. The titanium is etched at a controllable rate. The etchant oxidizes the titanium, and the oxidized titanium forms a complex in the etchant. When the concentration of this complex in the etchant nears its solubility limit, it precipitates and forms a film on the titanium metal surface. This film reduces the rate of the etch, enabling the amount of titanium removed by the etchant to be controlled.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
| title | Process for etching titanium at a controllable rate |
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