Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor
In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection h...
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| creator | KAWATA YOSHINOBU MINAMI TOSHIHIKO |
| description | In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes. |
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An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.</description><edition>5</edition><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940816&DB=EPODOC&CC=US&NR=5338363A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19940816&DB=EPODOC&CC=US&NR=5338363A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWATA; YOSHINOBU</creatorcontrib><creatorcontrib>MINAMI; TOSHIHIKO</creatorcontrib><title>Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor</title><description>In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. 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An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor |
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