Semiconductor device having a double-layer interconnection structure

A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OHNISHI, TERUHITO, UEDA, TETSUYA, YANO, KOHSAKU, NISHIMURA, HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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