Semiconductor device having a double-layer interconnection structure

Semiconductor device having a double-layer interconnection structure

A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OHNISHI, TERUHITO, UEDA, TETSUYA, YANO, KOHSAKU, NISHIMURA, HIROSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator OHNISHI
TERUHITO
UEDA
TETSUYA
YANO
KOHSAKU
NISHIMURA
HIROSHI
description A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films, respectively, have a multi-layered structure including a sub-layer made of Al or Al alloys.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5327012A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5327012A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5327012A3</originalsourceid><addsrcrecordid>eNrjZHAJTs3NTM7PSylNLskvUkhJLctMTlXISCzLzEtXSFRIyS9NyknVzUmsTC1SyMwrSS0Cqs1LTS7JzM9TKC4pAuoqLUrlYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGmxkbmBoZGjsaEVQAAS-cy8g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device having a double-layer interconnection structure</title><source>esp@cenet</source><creator>OHNISHI; TERUHITO ; UEDA; TETSUYA ; YANO; KOHSAKU ; NISHIMURA; HIROSHI</creator><creatorcontrib>OHNISHI; TERUHITO ; UEDA; TETSUYA ; YANO; KOHSAKU ; NISHIMURA; HIROSHI</creatorcontrib><description>A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films, respectively, have a multi-layered structure including a sub-layer made of Al or Al alloys.</description><edition>5</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19940705&amp;DB=EPODOC&amp;CC=US&amp;NR=5327012A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19940705&amp;DB=EPODOC&amp;CC=US&amp;NR=5327012A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OHNISHI; TERUHITO</creatorcontrib><creatorcontrib>UEDA; TETSUYA</creatorcontrib><creatorcontrib>YANO; KOHSAKU</creatorcontrib><creatorcontrib>NISHIMURA; HIROSHI</creatorcontrib><title>Semiconductor device having a double-layer interconnection structure</title><description>A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films, respectively, have a multi-layered structure including a sub-layer made of Al or Al alloys.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJTs3NTM7PSylNLskvUkhJLctMTlXISCzLzEtXSFRIyS9NyknVzUmsTC1SyMwrSS0Cqs1LTS7JzM9TKC4pAuoqLUrlYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGmxkbmBoZGjsaEVQAAS-cy8g</recordid><startdate>19940705</startdate><enddate>19940705</enddate><creator>OHNISHI; TERUHITO</creator><creator>UEDA; TETSUYA</creator><creator>YANO; KOHSAKU</creator><creator>NISHIMURA; HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>19940705</creationdate><title>Semiconductor device having a double-layer interconnection structure</title><author>OHNISHI; TERUHITO ; UEDA; TETSUYA ; YANO; KOHSAKU ; NISHIMURA; HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5327012A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OHNISHI; TERUHITO</creatorcontrib><creatorcontrib>UEDA; TETSUYA</creatorcontrib><creatorcontrib>YANO; KOHSAKU</creatorcontrib><creatorcontrib>NISHIMURA; HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OHNISHI; TERUHITO</au><au>UEDA; TETSUYA</au><au>YANO; KOHSAKU</au><au>NISHIMURA; HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device having a double-layer interconnection structure</title><date>1994-07-05</date><risdate>1994</risdate><abstract>A semiconductor device having a double-layer interconnection with contact portions between first and second metal films, each having a multi-layered structure, covered with at least a silicon nitride film is provided wherein an electromigration characteristic at the contact portions is improved. The improvement is achieved by defining a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at the contact portions is not larger than 2/5 of a value obtained by multiplying a thickness of the silicon nitride film by a stress of the nitride film formed at non-contact portions. By this, the stress exerted on the second metal film is reduced to improve the electromigration life at the contact portions by about one order of magnitude. The first and second metal films, respectively, have a multi-layered structure including a sub-layer made of Al or Al alloys.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US5327012A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device having a double-layer interconnection structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T23%3A41%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OHNISHI;%20TERUHITO&rft.date=1994-07-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5327012A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true