Enhancing step coverage by creating a tapered profile through three dimensional resist pull back

A new method of forming contact or via openings is achieved. A photoresist layer is formed and patterned top of layers of insulating materials overlying a semiconductor substrate. An isotropic etch is performed etching both vertically and horizontally a portion of the insulating layers. The photores...

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Bibliographische Detailangaben

Hauptverfasser:	CHOU, ERH-NAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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