Focused ion beam for thin film resistor trim on aluminum nitride substrates

A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.

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Hauptverfasser: LAU, JAMES C, LOWERY, MAURICE, LUI, KENNETH
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Sprache:eng
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creator LAU
JAMES C
LOWERY
MAURICE
LUI
KENNETH
description A method for trimming thin film resistors. A focused inert ion beam is employed to selectively remove portions of a resistive film deposited on a substrate.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
title Focused ion beam for thin film resistor trim on aluminum nitride substrates
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