ENHANCED SUPERCONDUCTING FIELD-EFFECT TRANSISTOR

ENHANCED SUPERCONDUCTING FIELD-EFFECT TRANSISTOR

The present invention relates to an inverted MISFET structure with high-TC superconducting channel (25). This field-effect transistor comprises a gate substrate (22) consisting of a doped compound with perovskite structure, an interfacial layer (23) with one or more elements of the VIII or IB subgro...

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Hauptverfasser: MUELLER, CARL A, SCHLOM, DARRELL, MANNHART, JOCHEN D, BEDNORZ, JOHANNES G
Format: Patent
Sprache:eng
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ELECTRICITY
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creator MUELLER
CARL A
SCHLOM
DARRELL
MANNHART
JOCHEN D
BEDNORZ
JOHANNES G
description The present invention relates to an inverted MISFET structure with high-TC superconducting channel (25). This field-effect transistor comprises a gate substrate (22) consisting of a doped compound with perovskite structure, an interfacial layer (23) with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer (24) consisting of a perovskite or related compound, and a high-TC superconducting channel (25). An electric field, generated by a voltage applied to its gate (20), alters the conductivity of the channel (25). The performance of this device is improved three-fold in comparison to known MISFETs with superconducting channels.
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title ENHANCED SUPERCONDUCTING FIELD-EFFECT TRANSISTOR
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