ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER

A one-dimensional time-delay integration type solid-state imager includes a plurality of photo-electricity conversion parts which stores signal charges caused by incident light arranged on a semiconductor substrate, a vertical CCD provided corresponding to a train of the photoelectricity conversion...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NAGAYOSHI, SHINSUKE, TAJIME, TOORU
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NAGAYOSHI
SHINSUKE
TAJIME
TOORU
description A one-dimensional time-delay integration type solid-state imager includes a plurality of photo-electricity conversion parts which stores signal charges caused by incident light arranged on a semiconductor substrate, a vertical CCD provided corresponding to a train of the photoelectricity conversion parts for reading out signal charges stored at the photo-electricity conversion parts, and gate means for reading out signal charges stored at the photoelectricity conversion parts to the vertical CCD. The signal charges corresponding to the same observed image among signal charges successively moving on the plurality of photo-electricity conversion parts are added onto the same vertical CCD thereby to enhance the signal-to-noise ratio, and a background signal charge removing region for removing background signal charges, is provided at the vertical charge transfer part at a later stage of the vertical CCD, and background signals are removed in the period of the vertical charge transfer of signal charges.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5225694A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5225694A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5225694A3</originalsourceid><addsrcrecordid>eNrjZDDy93NVcPH0dfUL9vT3c_RRCNFz0fNU8A9wDXIMAYooBPv7eLroBoc4hrgqePo6ursG8TCwpiXmFKfyQmluBnk31xBnD93Ugvz41OKCxOTUvNSS-NBgUyMjUzNLE0djwioA0iomBg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER</title><source>esp@cenet</source><creator>NAGAYOSHI; SHINSUKE ; TAJIME; TOORU</creator><creatorcontrib>NAGAYOSHI; SHINSUKE ; TAJIME; TOORU</creatorcontrib><description>A one-dimensional time-delay integration type solid-state imager includes a plurality of photo-electricity conversion parts which stores signal charges caused by incident light arranged on a semiconductor substrate, a vertical CCD provided corresponding to a train of the photoelectricity conversion parts for reading out signal charges stored at the photo-electricity conversion parts, and gate means for reading out signal charges stored at the photoelectricity conversion parts to the vertical CCD. The signal charges corresponding to the same observed image among signal charges successively moving on the plurality of photo-electricity conversion parts are added onto the same vertical CCD thereby to enhance the signal-to-noise ratio, and a background signal charge removing region for removing background signal charges, is provided at the vertical charge transfer part at a later stage of the vertical CCD, and background signals are removed in the period of the vertical charge transfer of signal charges.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19930706&amp;DB=EPODOC&amp;CC=US&amp;NR=5225694A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19930706&amp;DB=EPODOC&amp;CC=US&amp;NR=5225694A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAGAYOSHI; SHINSUKE</creatorcontrib><creatorcontrib>TAJIME; TOORU</creatorcontrib><title>ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER</title><description>A one-dimensional time-delay integration type solid-state imager includes a plurality of photo-electricity conversion parts which stores signal charges caused by incident light arranged on a semiconductor substrate, a vertical CCD provided corresponding to a train of the photoelectricity conversion parts for reading out signal charges stored at the photo-electricity conversion parts, and gate means for reading out signal charges stored at the photoelectricity conversion parts to the vertical CCD. The signal charges corresponding to the same observed image among signal charges successively moving on the plurality of photo-electricity conversion parts are added onto the same vertical CCD thereby to enhance the signal-to-noise ratio, and a background signal charge removing region for removing background signal charges, is provided at the vertical charge transfer part at a later stage of the vertical CCD, and background signals are removed in the period of the vertical charge transfer of signal charges.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDy93NVcPH0dfUL9vT3c_RRCNFz0fNU8A9wDXIMAYooBPv7eLroBoc4hrgqePo6ursG8TCwpiXmFKfyQmluBnk31xBnD93Ugvz41OKCxOTUvNSS-NBgUyMjUzNLE0djwioA0iomBg</recordid><startdate>19930706</startdate><enddate>19930706</enddate><creator>NAGAYOSHI; SHINSUKE</creator><creator>TAJIME; TOORU</creator><scope>EVB</scope></search><sort><creationdate>19930706</creationdate><title>ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER</title><author>NAGAYOSHI; SHINSUKE ; TAJIME; TOORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5225694A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAGAYOSHI; SHINSUKE</creatorcontrib><creatorcontrib>TAJIME; TOORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAGAYOSHI; SHINSUKE</au><au>TAJIME; TOORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER</title><date>1993-07-06</date><risdate>1993</risdate><abstract>A one-dimensional time-delay integration type solid-state imager includes a plurality of photo-electricity conversion parts which stores signal charges caused by incident light arranged on a semiconductor substrate, a vertical CCD provided corresponding to a train of the photoelectricity conversion parts for reading out signal charges stored at the photo-electricity conversion parts, and gate means for reading out signal charges stored at the photoelectricity conversion parts to the vertical CCD. The signal charges corresponding to the same observed image among signal charges successively moving on the plurality of photo-electricity conversion parts are added onto the same vertical CCD thereby to enhance the signal-to-noise ratio, and a background signal charge removing region for removing background signal charges, is provided at the vertical charge transfer part at a later stage of the vertical CCD, and background signals are removed in the period of the vertical charge transfer of signal charges.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US5225694A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
title ONE DIMENSIONAL T.D.I OPERATION SOLID-STATE IMAGER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T11%3A10%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAGAYOSHI;%20SHINSUKE&rft.date=1993-07-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS5225694A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true