Method for fabricating bipolar and CMOS devices in integrated circuits using contact metallization for local interconnect and via landing

A method for fabricating bipolar and CMOS devices in integrated circuits using W as a local interconnect and via landing pad for bipolar and CMOS devices. The method includes the forming of an oxide/silicon bilayer above a local interconnect of tungsten/titanium wherein the oxide is patterned as a m...

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Hauptverfasser:	PATTON, GARY L, KOBEDA, EDWARD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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