Mixture thin film forming apparatus
The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each oth...
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| creator | HOSHINOUCHI SUSUMU OHNISHI HIROSHI |
| description | The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US5186120A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US5186120A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US5186120A3</originalsourceid><addsrcrecordid>eNrjZFD2zawoKS1KVSjJyMxTSMvMyVVIyy_KzcxLV0gsKEgsSiwpLeZhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwaaGFmaGRgaOxoRVAABjRSXu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Mixture thin film forming apparatus</title><source>esp@cenet</source><creator>HOSHINOUCHI; SUSUMU ; OHNISHI; HIROSHI</creator><creatorcontrib>HOSHINOUCHI; SUSUMU ; OHNISHI; HIROSHI</creatorcontrib><description>The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1993</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930216&DB=EPODOC&CC=US&NR=5186120A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19930216&DB=EPODOC&CC=US&NR=5186120A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOSHINOUCHI; SUSUMU</creatorcontrib><creatorcontrib>OHNISHI; HIROSHI</creatorcontrib><title>Mixture thin film forming apparatus</title><description>The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1993</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD2zawoKS1KVSjJyMxTSMvMyVVIyy_KzcxLV0gsKEgsSiwpLeZhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwaaGFmaGRgaOxoRVAABjRSXu</recordid><startdate>19930216</startdate><enddate>19930216</enddate><creator>HOSHINOUCHI; SUSUMU</creator><creator>OHNISHI; HIROSHI</creator><scope>EVB</scope></search><sort><creationdate>19930216</creationdate><title>Mixture thin film forming apparatus</title><author>HOSHINOUCHI; SUSUMU ; OHNISHI; HIROSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5186120A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1993</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HOSHINOUCHI; SUSUMU</creatorcontrib><creatorcontrib>OHNISHI; HIROSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOSHINOUCHI; SUSUMU</au><au>OHNISHI; HIROSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Mixture thin film forming apparatus</title><date>1993-02-16</date><risdate>1993</risdate><abstract>The present invention is directed to a mixture thin film forming apparatus for accumulating gasified components on a substrate which is arranged in a reaction chamber. According to the present invention, respective components of a gas supply system, which are different in heat capacity from each other, are independently controlled in their temperatures by temperature control parts respectively, so that the respective components can be adjusted to desired temperatures. Thus, the gas supply system is prevented from deviation of temperature distribution, whereby the overall gas supply system can be adjusted within a prescribed temperature range. Thus, raw materials are prevented from precipitation, irregular reaction or the like, to enable stable gas supply.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Mixture thin film forming apparatus |
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