POWER VDMOSFET WITH SCHOTTKY ON LIGHTLY DOPED DRAIN OF LATERAL DRIVER FET

A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower dopin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JONES, FREDERICK P, MANSMANN, JEFFREY G, JACKOSKI, CLAIRE E, WRATHALL, ROBERT S, NEILSON, JOHN M. S, YEDINAK, JOSEPH A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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