POWER VDMOSFET WITH SCHOTTKY ON LIGHTLY DOPED DRAIN OF LATERAL DRIVER FET

A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower dopin...

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Hauptverfasser:	JONES, FREDERICK P, MANSMANN, JEFFREY G, JACKOSKI, CLAIRE E, WRATHALL, ROBERT S, NEILSON, JOHN M. S, YEDINAK, JOSEPH A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	JONES FREDERICK P MANSMANN JEFFREY G JACKOSKI CLAIRE E WRATHALL ROBERT S NEILSON JOHN M. S YEDINAK JOSEPH A
description	A monolithic semiconductor device comprises a VDMOS transistor having first and second main electrodes and a control electrode, and a lateral MOSFET having first and second main electrodes and a control electrode, wherein one of the first and second electrodes of the lateral MOSFET has a lower doping concentration than that of the first and second main electrodes of the VDMOS transistor for forming a Schottky barrier diode.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	POWER VDMOSFET WITH SCHOTTKY ON LIGHTLY DOPED DRAIN OF LATERAL DRIVER FET
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