PHOTORESIST REMOVAL
A process and a system for the complete stripping of the photoresist layer from semiconductor wafers after each processing step (lithography step) in a multi-step production process. At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal...
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| creator | NACHSHON YEHUDA |
| description | A process and a system for the complete stripping of the photoresist layer from semiconductor wafers after each processing step (lithography step) in a multi-step production process. At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal is also required after the final processing step. Up to 15 or more steps are needed in such wafer production process. According to the invention a high intensity pulsed laser beam sweeps the wafer surface as a narrow, preferably rectangular and strip the photoresist by sweeping the entire surface of the wafer. Pulse duration is generally shorter than 500 nano-sec (nsec) and preferably about 10 to 100 nsec, with much larger time intervals between pulses. The interaction of the beam with the photoresist ablates the photoresist. The ablation proceeds stepwise, each pulse ablating a certain area of the photoresist to a certian depth, and this without any damage to the processed wafer. The sweep suffices to completely remove the photoresist, reading the wafer for the next process step; the overall duration of the removal being short. |
| format | Patent |
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At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal is also required after the final processing step. Up to 15 or more steps are needed in such wafer production process. According to the invention a high intensity pulsed laser beam sweeps the wafer surface as a narrow, preferably rectangular and strip the photoresist by sweeping the entire surface of the wafer. Pulse duration is generally shorter than 500 nano-sec (nsec) and preferably about 10 to 100 nsec, with much larger time intervals between pulses. The interaction of the beam with the photoresist ablates the photoresist. The ablation proceeds stepwise, each pulse ablating a certain area of the photoresist to a certian depth, and this without any damage to the processed wafer. The sweep suffices to completely remove the photoresist, reading the wafer for the next process step; the overall duration of the removal being short.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT ; DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; HOLOGRAPHY ; MACHINE TOOLS ; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS THEREFOR ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920519&DB=EPODOC&CC=US&NR=5114834A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920519&DB=EPODOC&CC=US&NR=5114834A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NACHSHON; YEHUDA</creatorcontrib><title>PHOTORESIST REMOVAL</title><description>A process and a system for the complete stripping of the photoresist layer from semiconductor wafers after each processing step (lithography step) in a multi-step production process. At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal is also required after the final processing step. Up to 15 or more steps are needed in such wafer production process. According to the invention a high intensity pulsed laser beam sweeps the wafer surface as a narrow, preferably rectangular and strip the photoresist by sweeping the entire surface of the wafer. Pulse duration is generally shorter than 500 nano-sec (nsec) and preferably about 10 to 100 nsec, with much larger time intervals between pulses. The interaction of the beam with the photoresist ablates the photoresist. The ablation proceeds stepwise, each pulse ablating a certain area of the photoresist to a certian depth, and this without any damage to the processed wafer. The sweep suffices to completely remove the photoresist, reading the wafer for the next process step; the overall duration of the removal being short.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT</subject><subject>DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>HOLOGRAPHY</subject><subject>MACHINE TOOLS</subject><subject>MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>MATERIALS THEREFOR</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAO8PAP8Q9yDfYMDlEIcvX1D3P04WFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBpoaGJhbGJo7GhFUAAAbpHfI</recordid><startdate>19920519</startdate><enddate>19920519</enddate><creator>NACHSHON; YEHUDA</creator><scope>EVB</scope></search><sort><creationdate>19920519</creationdate><title>PHOTORESIST REMOVAL</title><author>NACHSHON; YEHUDA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5114834A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT</topic><topic>DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>HOLOGRAPHY</topic><topic>MACHINE TOOLS</topic><topic>MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>MATERIALS THEREFOR</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NACHSHON; YEHUDA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NACHSHON; YEHUDA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTORESIST REMOVAL</title><date>1992-05-19</date><risdate>1992</risdate><abstract>A process and a system for the complete stripping of the photoresist layer from semiconductor wafers after each processing step (lithography step) in a multi-step production process. At the end of each such step the photoresist must be removed, preparing the wafer for the next step, and such removal is also required after the final processing step. Up to 15 or more steps are needed in such wafer production process. According to the invention a high intensity pulsed laser beam sweeps the wafer surface as a narrow, preferably rectangular and strip the photoresist by sweeping the entire surface of the wafer. Pulse duration is generally shorter than 500 nano-sec (nsec) and preferably about 10 to 100 nsec, with much larger time intervals between pulses. The interaction of the beam with the photoresist ablates the photoresist. The ablation proceeds stepwise, each pulse ablating a certain area of the photoresist to a certian depth, and this without any damage to the processed wafer. The sweep suffices to completely remove the photoresist, reading the wafer for the next process step; the overall duration of the removal being short.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING HOLOGRAPHY MACHINE TOOLS MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS THEREFOR METAL-WORKING NOT OTHERWISE PROVIDED FOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | PHOTORESIST REMOVAL |
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