ATOMIZED THIN FILM FORMING APPARATUS
There is disclosed an atomized thin film forming apparatus for forming a thin film by spouting an atomized source solution toward a heated substrate. A pair of inner wall surfaces(3a, 3b) defined at the upper portion of a film forming nozzle(3) and disposed opposite with each other in the longitudin...
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| creator | SHIBA NOBUYASU IMAI MIZUHO SEKIGUCHI MIKIO IIDA HIDEYO |
| description | There is disclosed an atomized thin film forming apparatus for forming a thin film by spouting an atomized source solution toward a heated substrate. A pair of inner wall surfaces(3a, 3b) defined at the upper portion of a film forming nozzle(3) and disposed opposite with each other in the longitudinal direction of a film forming chamber(4) and restricted so as to be gradually narrowed in the interval therebetween toward a spouting opening(9) from an atomizer(1) with smooth curve. Hence, it is possible to prevent a mist of the source solution atomized by the atomier(1) from being locally stagnant in the film forming nozzle(3) and prevent a precipitation of the atomized source solution from growing. Consequently, the flow of the mist of the source solution is not prevented by the precipitation of the atomized source solution so that the thin film is formed over the surface of the substrate(6) with high uniformity for a long period of time. |
| format | Patent |
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A pair of inner wall surfaces(3a, 3b) defined at the upper portion of a film forming nozzle(3) and disposed opposite with each other in the longitudinal direction of a film forming chamber(4) and restricted so as to be gradually narrowed in the interval therebetween toward a spouting opening(9) from an atomizer(1) with smooth curve. Hence, it is possible to prevent a mist of the source solution atomized by the atomier(1) from being locally stagnant in the film forming nozzle(3) and prevent a precipitation of the atomized source solution from growing. Consequently, the flow of the mist of the source solution is not prevented by the precipitation of the atomized source solution so that the thin film is formed over the surface of the substrate(6) with high uniformity for a long period of time.</description><language>eng</language><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; ATOMISING APPARATUS ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; METALLURGY ; MINERAL OR SLAG WOOL ; NOZZLES ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPRAYING APPARATUS ; SPRAYING OR ATOMISING IN GENERAL ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING</subject><creationdate>1992</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920225&DB=EPODOC&CC=US&NR=5090360A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76304</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19920225&DB=EPODOC&CC=US&NR=5090360A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIBA; NOBUYASU</creatorcontrib><creatorcontrib>IMAI; MIZUHO</creatorcontrib><creatorcontrib>SEKIGUCHI; MIKIO</creatorcontrib><creatorcontrib>IIDA; HIDEYO</creatorcontrib><title>ATOMIZED THIN FILM FORMING APPARATUS</title><description>There is disclosed an atomized thin film forming apparatus for forming a thin film by spouting an atomized source solution toward a heated substrate. A pair of inner wall surfaces(3a, 3b) defined at the upper portion of a film forming nozzle(3) and disposed opposite with each other in the longitudinal direction of a film forming chamber(4) and restricted so as to be gradually narrowed in the interval therebetween toward a spouting opening(9) from an atomizer(1) with smooth curve. Hence, it is possible to prevent a mist of the source solution atomized by the atomier(1) from being locally stagnant in the film forming nozzle(3) and prevent a precipitation of the atomized source solution from growing. Consequently, the flow of the mist of the source solution is not prevented by the precipitation of the atomized source solution so that the thin film is formed over the surface of the substrate(6) with high uniformity for a long period of time.</description><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>ATOMISING APPARATUS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>NOZZLES</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING APPARATUS</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1992</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFBxDPH39YxydVEI8fD0U3Dz9PFVcPMP8vX0c1dwDAhwDHIMCQ3mYWBNS8wpTuWF0twM8m6uIc4euqkF-fGpxQWJyal5qSXxocGmBpYGxmYGjsaEVQAA_rUiXg</recordid><startdate>19920225</startdate><enddate>19920225</enddate><creator>SHIBA; NOBUYASU</creator><creator>IMAI; MIZUHO</creator><creator>SEKIGUCHI; MIKIO</creator><creator>IIDA; HIDEYO</creator><scope>EVB</scope></search><sort><creationdate>19920225</creationdate><title>ATOMIZED THIN FILM FORMING APPARATUS</title><author>SHIBA; NOBUYASU ; IMAI; MIZUHO ; SEKIGUCHI; MIKIO ; IIDA; HIDEYO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US5090360A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1992</creationdate><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>ATOMISING APPARATUS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>NOZZLES</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING APPARATUS</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIBA; NOBUYASU</creatorcontrib><creatorcontrib>IMAI; MIZUHO</creatorcontrib><creatorcontrib>SEKIGUCHI; MIKIO</creatorcontrib><creatorcontrib>IIDA; HIDEYO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIBA; NOBUYASU</au><au>IMAI; MIZUHO</au><au>SEKIGUCHI; MIKIO</au><au>IIDA; HIDEYO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ATOMIZED THIN FILM FORMING APPARATUS</title><date>1992-02-25</date><risdate>1992</risdate><abstract>There is disclosed an atomized thin film forming apparatus for forming a thin film by spouting an atomized source solution toward a heated substrate. A pair of inner wall surfaces(3a, 3b) defined at the upper portion of a film forming nozzle(3) and disposed opposite with each other in the longitudinal direction of a film forming chamber(4) and restricted so as to be gradually narrowed in the interval therebetween toward a spouting opening(9) from an atomizer(1) with smooth curve. Hence, it is possible to prevent a mist of the source solution atomized by the atomier(1) from being locally stagnant in the film forming nozzle(3) and prevent a precipitation of the atomized source solution from growing. Consequently, the flow of the mist of the source solution is not prevented by the precipitation of the atomized source solution so that the thin film is formed over the surface of the substrate(6) with high uniformity for a long period of time.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ATOMISING APPARATUS BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL NOZZLES PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPRAYING APPARATUS SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING |
| title | ATOMIZED THIN FILM FORMING APPARATUS |
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