Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture

A floating gate electrically erasable MOS transistor comprising a silicon substrate having source and drain regions and a channel region disposed between the source region and the drain region. The source and drain regions are formed from a semiconductor material having one conductivity type, and th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ANAND, KRANTI V, MADHU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!