Sub-valent molybdenum, tungsten, and chromium amides as sources for thermal chemical vapor deposition of metal-containing films

A thermal CVD process for forming a selected refractory metal-containing film onto a substrate comprising the steps of: (a) introducing a subvalent refractory metal amide as a reactant gas capable of forming said metal-containing film into a CVD reaction zone containing said substrate on which said...

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Bibliographische Detailangaben
Hauptverfasser: MCGEARY, MICHAEL J
Format: Patent
Sprache:eng
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