SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTRODE PAD STRUCTURE

SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTRODE PAD STRUCTURE

In a semiconductor device in which copper or copper alloy bonding wire is bonded to an electrode pad on a semiconductor element, the electrode pad is formed of a first metal layer ohmically contacting the semiconductor element, a second metal layer hard enough not to be deformed at wire bonding step...

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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description In a semiconductor device in which copper or copper alloy bonding wire is bonded to an electrode pad on a semiconductor element, the electrode pad is formed of a first metal layer ohmically contacting the semiconductor element, a second metal layer hard enough not to be deformed at wire bonding step, and a third metal layer for bonding a copper wire, to suppress variation in the electric characteristics of a bonding portion and the production of stain in the semiconductor element at wire bonding step.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE HAVING IMPROVED ELECTRODE PAD STRUCTURE
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