Method for forming local interconnects using chlorine bearing agents
A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide...
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| creator | DOUGLAS, MONTE, A |
| description | A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases in the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas. |
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A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases in the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2000</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001121&DB=EPODOC&CC=US&NR=4863559B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20001121&DB=EPODOC&CC=US&NR=4863559B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DOUGLAS, MONTE, A</creatorcontrib><title>Method for forming local interconnects using chlorine bearing agents</title><description>A method for etching titanium nitride local interconnects is disclosed. A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases in the reactor. 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A layer of titanium nitride is formed as a by-product of the formation of titanium silicide by direct reaction; this layer of titanium nitride is present over the titanium silicide layer, as well as over insulators such as oxide. A plasma etch using CCl4 as the etchant is used to etch the titanium nitride anisotropically, and selectively relative to the titanium silicide due to the passivation of the titanium silicide surface by the carbon atoms of the CCl4. Excess chlorine concentration may be reduced, further reducing the undesired etching of the titanium silicide, by providing a consumable power electrode, or by introducing chlorine scavenger gases in the reactor. The plasma may be ignited by exposing the gases to a mercury/argon light source, photodetaching electrons from the anions in the gas.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | Method for forming local interconnects using chlorine bearing agents |
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