Process for preparing low electrical contact resistance composition

A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an MxG100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from t...

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Hauptverfasser: DIBBLE, ERIC P, LEVINE, SOLOMON L, CUOMO, JEROME J
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creator DIBBLE
ERIC P
LEVINE
SOLOMON L
CUOMO
JEROME J
description A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an MxG100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substances coated with the composition and process for depositing the composition on substrates.
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SWITCHES
ELECTRICITY
EMERGENCY PROTECTIVE DEVICES
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
RELAYS
SELECTORS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Process for preparing low electrical contact resistance composition
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