Process for the stabilization of PN junctions

In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DECKERS, MARGARETE, REICHERT, HANSJOERG, SCHARF, LUDWIG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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