Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

A standard thin film circuit containing Ta2N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta2N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process...

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Hauptverfasser: NORWOOD, DAVID P
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
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DAVID P
description A standard thin film circuit containing Ta2N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta2N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta2N+Ti (10 ohms/square) and Ta2N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
RESISTORS
SEMICONDUCTOR DEVICES
title Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors
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