EPI defect reduction using rapid thermal annealing

Formation of defects in epi-layers above buried layers, particularly above arsenic buried layers, is substantially reduced by providing a brief high temperature Rapid Thermal Annealing (RTA) step after buried layer implantation, annealing-activation, and junction drive-in and before epi-layer growth...

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Bibliographische Detailangaben

Hauptverfasser:	HULSEWEH, TERRY, MILLER, MEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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