Transistor having integrated stabilizing resistor and method of making thereof

A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region sur...

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Hauptverfasser: SEKIYA, TSUNETO, ITO, SHINICHI, SHIGEKANE, HISAO
Format: Patent
Sprache:eng
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