Transistor having integrated stabilizing resistor and method of making thereof

Transistor having integrated stabilizing resistor and method of making thereof

A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region sur...

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Hauptverfasser: SEKIYA, TSUNETO, ITO, SHINICHI, SHIGEKANE, HISAO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SEKIYA
TSUNETO
ITO
SHINICHI
SHIGEKANE
HISAO
description A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region surrounds the ordinary emitter region. An elongated stabilizing resistive region has one end connected to the ordinary emitter region and the other to the base region. The protection region is positioned around, but spaced from, an end portion of the stabilizing resistive region only in the area where the resistive region connects to the ordinary emitter region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Transistor having integrated stabilizing resistor and method of making thereof
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