Low temperature silicon nitride CVD process

Thermal CVD process for forming Si3N4-type films on substrates by reaction of gaseous NF3 with gaseous disilane at a temperature in the range of 250 DEG -500 DEG C., at pressures of 0.1-10 Torr. The mole ratio of NF3 to silane is in the range of 0.5-3.0 and the reaction zone is preferably isothermal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FOSTER, DERRICK W
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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