Semiconductor transducer

A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar...

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Hauptverfasser:	KOWALSKI, CARL R, ALLEN, HENRY V, KNUTTI, JAMES W, PETERSEN, KURT E
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING
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creator	KOWALSKI CARL R ALLEN HENRY V KNUTTI JAMES W PETERSEN KURT E
description	A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4680606A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4680606A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4680606A3</originalsourceid><addsrcrecordid>eNrjZJAITs3NTM7PSylNLskvUigpSswrBrJTi3gYWNMSc4pTeaE0N4O8m2uIs4duakF-fGpxQWJyal5qSXxosImZhYGZgZmjMWEVAKS1Ih8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor transducer</title><source>esp@cenet</source><creator>KOWALSKI; CARL R ; ALLEN; HENRY V ; KNUTTI; JAMES W ; PETERSEN; KURT E</creator><creatorcontrib>KOWALSKI; CARL R ; ALLEN; HENRY V ; KNUTTI; JAMES W ; PETERSEN; KURT E</creatorcontrib><description>A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870714&DB=EPODOC&CC=US&NR=4680606A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870714&DB=EPODOC&CC=US&NR=4680606A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOWALSKI; CARL R</creatorcontrib><creatorcontrib>ALLEN; HENRY V</creatorcontrib><creatorcontrib>KNUTTI; JAMES W</creatorcontrib><creatorcontrib>PETERSEN; KURT E</creatorcontrib><title>Semiconductor transducer</title><description>A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAITs3NTM7PSylNLskvUigpSswrBrJTi3gYWNMSc4pTeaE0N4O8m2uIs4duakF-fGpxQWJyal5qSXxosImZhYGZgZmjMWEVAKS1Ih8</recordid><startdate>19870714</startdate><enddate>19870714</enddate><creator>KOWALSKI; CARL R</creator><creator>ALLEN; HENRY V</creator><creator>KNUTTI; JAMES W</creator><creator>PETERSEN; KURT E</creator><scope>EVB</scope></search><sort><creationdate>19870714</creationdate><title>Semiconductor transducer</title><author>KOWALSKI; CARL R ; ALLEN; HENRY V ; KNUTTI; JAMES W ; PETERSEN; KURT E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4680606A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KOWALSKI; CARL R</creatorcontrib><creatorcontrib>ALLEN; HENRY V</creatorcontrib><creatorcontrib>KNUTTI; JAMES W</creatorcontrib><creatorcontrib>PETERSEN; KURT E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOWALSKI; CARL R</au><au>ALLEN; HENRY V</au><au>KNUTTI; JAMES W</au><au>PETERSEN; KURT E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor transducer</title><date>1987-07-14</date><risdate>1987</risdate><abstract>A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US4680606A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE PHYSICS SEMICONDUCTOR DEVICES TESTING
title	Semiconductor transducer
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-16T09%3A03%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KOWALSKI;%20CARL%20R&rft.date=1987-07-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS4680606A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true