Method for making vertically layered MOMOM tunnel device
MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through t...
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creator | LADE ROBERT W SCHUTTEN HERMAN P BENJAMIN JAMES A |
description | MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4675980A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4675980A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4675980A3</originalsourceid><addsrcrecordid>eNrjZLDwTS3JyE9RSMsvUshNzM7MS1coSy0qyUxOzMmpVMhJrEwtSk1R8PUHQoWS0ry81ByFlNSyzORUHgbWtMSc4lReKM3NIO_mGuLsoZtakB-fWlyQmJyal1oSHxpsYmZuamlh4GhMWAUALKUtRg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for making vertically layered MOMOM tunnel device</title><source>esp@cenet</source><creator>LADE; ROBERT W ; SCHUTTEN; HERMAN P ; BENJAMIN; JAMES A</creator><creatorcontrib>LADE; ROBERT W ; SCHUTTEN; HERMAN P ; BENJAMIN; JAMES A</creatorcontrib><description>MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.</description><edition>4</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870630&DB=EPODOC&CC=US&NR=4675980A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19870630&DB=EPODOC&CC=US&NR=4675980A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LADE; ROBERT W</creatorcontrib><creatorcontrib>SCHUTTEN; HERMAN P</creatorcontrib><creatorcontrib>BENJAMIN; JAMES A</creatorcontrib><title>Method for making vertically layered MOMOM tunnel device</title><description>MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwTS3JyE9RSMsvUshNzM7MS1coSy0qyUxOzMmpVMhJrEwtSk1R8PUHQoWS0ry81ByFlNSyzORUHgbWtMSc4lReKM3NIO_mGuLsoZtakB-fWlyQmJyal1oSHxpsYmZuamlh4GhMWAUALKUtRg</recordid><startdate>19870630</startdate><enddate>19870630</enddate><creator>LADE; ROBERT W</creator><creator>SCHUTTEN; HERMAN P</creator><creator>BENJAMIN; JAMES A</creator><scope>EVB</scope></search><sort><creationdate>19870630</creationdate><title>Method for making vertically layered MOMOM tunnel device</title><author>LADE; ROBERT W ; SCHUTTEN; HERMAN P ; BENJAMIN; JAMES A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4675980A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LADE; ROBERT W</creatorcontrib><creatorcontrib>SCHUTTEN; HERMAN P</creatorcontrib><creatorcontrib>BENJAMIN; JAMES A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LADE; ROBERT W</au><au>SCHUTTEN; HERMAN P</au><au>BENJAMIN; JAMES A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for making vertically layered MOMOM tunnel device</title><date>1987-06-30</date><risdate>1987</risdate><abstract>MOMOM structural geometry and fabrication techniques are is disclosed. First and second metal layer strips (6 and 10) are supported on an insulating substrate (4) and have vertically overlapped portions sandwiched between insulating layers (8, 12). A generally vertical side (18) is defined through the layers to the substrate to expose vertical edges (20, 24) of the metal layers which are oxidized (32, 34) and covered by a third metal layer (44) extending therebetween. In the preferred embodiment, the middle insulating layer (8) is undercut (28), oxidized (36, 40), and filled with metallization (50), to provide a vertical rectilinear conduction path.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Method for making vertically layered MOMOM tunnel device |
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