Semiconductor device passivated with phosphosilicate glass over silicon nitride

The semiconductor device includes a layer of silicon nitride (Si3N4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of...

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Bibliographische Detailangaben

Hauptverfasser:	DAWSON, ROBERT H, SCHNABLE, GEORGE L
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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