Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching

An improved process is disclosed for making an integrated circuit structure wherein a trench is etched into one or more layers to electrically separate one of the devices in the integrated circuit structure from other portions thereof by first patterning silicon dioxide and silicon nitride layer on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SCHLUPP, RONALD L, PRICE, WILLIAM L, THOMAS, MAMMEN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!