Patterning of polyimide films with far ultraviolet light
A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the powe...
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| creator | HOLLOWAY KAREN L BLUM SAMUEL E SRINIVASAN RANGASWAMY |
| description | A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4568632A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4568632A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4568632A3</originalsourceid><addsrcrecordid>eNrjZLAISCwpSS3Ky8xLV8hPUyjIz6nMzM1MSVVIy8zJLVYozyzJUEhLLFIozSkpSizLzM9JLVHIyUzPKOFhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwSamZhZmxkaOxoRVAACCpS4N</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Patterning of polyimide films with far ultraviolet light</title><source>esp@cenet</source><creator>HOLLOWAY; KAREN L ; BLUM; SAMUEL E ; SRINIVASAN; RANGASWAMY</creator><creatorcontrib>HOLLOWAY; KAREN L ; BLUM; SAMUEL E ; SRINIVASAN; RANGASWAMY</creatorcontrib><description>A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.</description><edition>4</edition><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860204&DB=EPODOC&CC=US&NR=4568632A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860204&DB=EPODOC&CC=US&NR=4568632A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOLLOWAY; KAREN L</creatorcontrib><creatorcontrib>BLUM; SAMUEL E</creatorcontrib><creatorcontrib>SRINIVASAN; RANGASWAMY</creatorcontrib><title>Patterning of polyimide films with far ultraviolet light</title><description>A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAISCwpSS3Ky8xLV8hPUyjIz6nMzM1MSVVIy8zJLVYozyzJUEhLLFIozSkpSizLzM9JLVHIyUzPKOFhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwSamZhZmxkaOxoRVAACCpS4N</recordid><startdate>19860204</startdate><enddate>19860204</enddate><creator>HOLLOWAY; KAREN L</creator><creator>BLUM; SAMUEL E</creator><creator>SRINIVASAN; RANGASWAMY</creator><scope>EVB</scope></search><sort><creationdate>19860204</creationdate><title>Patterning of polyimide films with far ultraviolet light</title><author>HOLLOWAY; KAREN L ; BLUM; SAMUEL E ; SRINIVASAN; RANGASWAMY</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4568632A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>HOLLOWAY; KAREN L</creatorcontrib><creatorcontrib>BLUM; SAMUEL E</creatorcontrib><creatorcontrib>SRINIVASAN; RANGASWAMY</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOLLOWAY; KAREN L</au><au>BLUM; SAMUEL E</au><au>SRINIVASAN; RANGASWAMY</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Patterning of polyimide films with far ultraviolet light</title><date>1986-02-04</date><risdate>1986</risdate><abstract>A method is described for photoetching polyimides efficiently, and without the need for any chemical development steps. At least 1000 ANGSTROM of the polyimide are removed by irradiation of the polyimide with ultraviolet radiation having wavelengths less than 220 nm. To enhance the process, the power density of the radiation is greater than about 60 mJ/cm2. The presence of an atmosphere containing oxygen enhances the etch rate, although photoetching will occur in other atmospheres.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Patterning of polyimide films with far ultraviolet light |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T21%3A12%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HOLLOWAY;%20KAREN%20L&rft.date=1986-02-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS4568632A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |