Light emitting diode having silicon carbide layers

Light emitting diode having silicon carbide layers

A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a...

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Hauptverfasser: HOFFMANN, LUDWIG, THEIS, DIETMAR, WEYRICH, CLAUS, ZIEGLER, GUENTHER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HOFFMANN
LUDWIG
THEIS
DIETMAR
WEYRICH
CLAUS
ZIEGLER
GUENTHER
description A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4531142A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4531142A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4531142A3</originalsourceid><addsrcrecordid>eNrjZDDyyUzPKFFIzc0sKcnMS1dIycxPSVXISCwDcYozczKT8_MUkhOLkjKBwjmJlalFxTwMrGmJOcWpvFCam0HezTXE2UM3tSA_PrW4IDE5NS-1JD402MTU2NDQxMjRmLAKABzfK1E</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Light emitting diode having silicon carbide layers</title><source>esp@cenet</source><creator>HOFFMANN; LUDWIG ; THEIS; DIETMAR ; WEYRICH; CLAUS ; ZIEGLER; GUENTHER</creator><creatorcontrib>HOFFMANN; LUDWIG ; THEIS; DIETMAR ; WEYRICH; CLAUS ; ZIEGLER; GUENTHER</creatorcontrib><description>A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.</description><edition>3</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1985</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19850723&amp;DB=EPODOC&amp;CC=US&amp;NR=4531142A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19850723&amp;DB=EPODOC&amp;CC=US&amp;NR=4531142A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOFFMANN; LUDWIG</creatorcontrib><creatorcontrib>THEIS; DIETMAR</creatorcontrib><creatorcontrib>WEYRICH; CLAUS</creatorcontrib><creatorcontrib>ZIEGLER; GUENTHER</creatorcontrib><title>Light emitting diode having silicon carbide layers</title><description>A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDyyUzPKFFIzc0sKcnMS1dIycxPSVXISCwDcYozczKT8_MUkhOLkjKBwjmJlalFxTwMrGmJOcWpvFCam0HezTXE2UM3tSA_PrW4IDE5NS-1JD402MTU2NDQxMjRmLAKABzfK1E</recordid><startdate>19850723</startdate><enddate>19850723</enddate><creator>HOFFMANN; LUDWIG</creator><creator>THEIS; DIETMAR</creator><creator>WEYRICH; CLAUS</creator><creator>ZIEGLER; GUENTHER</creator><scope>EVB</scope></search><sort><creationdate>19850723</creationdate><title>Light emitting diode having silicon carbide layers</title><author>HOFFMANN; LUDWIG ; THEIS; DIETMAR ; WEYRICH; CLAUS ; ZIEGLER; GUENTHER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4531142A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HOFFMANN; LUDWIG</creatorcontrib><creatorcontrib>THEIS; DIETMAR</creatorcontrib><creatorcontrib>WEYRICH; CLAUS</creatorcontrib><creatorcontrib>ZIEGLER; GUENTHER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOFFMANN; LUDWIG</au><au>THEIS; DIETMAR</au><au>WEYRICH; CLAUS</au><au>ZIEGLER; GUENTHER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light emitting diode having silicon carbide layers</title><date>1985-07-23</date><risdate>1985</risdate><abstract>A light emitting diode has a substrate body consisting of silicon carbide, which is transmissive for the luminescent radiation generated by the diode. The diode has a first epitaxially deposited layer, consisting of silicon carbide of a first conductivity type, disposed on the substrate body, and a second epitaxially deposited layer of silicon carbide of a second conductivity type disposed on the first layer. The diode has one electrode connected to the second layer and another electrode connected to an exposed portion of the first layer.</abstract><edition>3</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Light emitting diode having silicon carbide layers
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T16%3A31%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HOFFMANN;%20LUDWIG&rft.date=1985-07-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS4531142A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true