Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages

A semiconductor component such as a four layer assymetrical thyristor having four zones of alternately opposite conductivity type, including a P emitter, an N base, a P base and an N emitter, wherein in the N base zone there is provided a stopping layer in a partial region adjacent the P emitter. Th...

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Hauptverfasser:	SITTIG, ROLAND
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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