Method of deposition of silicon in fine crystalline form
Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the be...
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| creator | DIETZE WOLFGANG |
| description | Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of the deposition, at a temperature at least equal to optimal temperature for deposition of silicon thereon and, in accordance with consequent increase in thickness of the silicon deposited on the substrate, gradually reducing the temperature of the substrate while maintaining at a minimal value the other parameters determining the rate of deposition. |
| format | Patent |
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CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1984</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840117&DB=EPODOC&CC=US&NR=4426408A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840117&DB=EPODOC&CC=US&NR=4426408A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DIETZE; 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WOLFGANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DIETZE; WOLFGANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of deposition of silicon in fine crystalline form</title><date>1984-01-17</date><risdate>1984</risdate><abstract>Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of the deposition, at a temperature at least equal to optimal temperature for deposition of silicon thereon and, in accordance with consequent increase in thickness of the silicon deposited on the substrate, gradually reducing the temperature of the substrate while maintaining at a minimal value the other parameters determining the rate of deposition.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method of deposition of silicon in fine crystalline form |
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