Laser process for gettering defects in semiconductor devices

A process for gettering defects in a semiconductor is provided. The process comprises using a laser beam to drive a dopant material into a melted non-active surface of a semiconductor device, followed by heating the semiconductor to drive defects to traps formed by the dopant. The process creates in...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PRESSLEY, ROBERT J
Format: Patent
Sprache:eng
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