Integrated CRC filter circuit
A capacitor-resistor-capacitor (CRC) element for active filter realization, which is fully integrable and compatible with MOS technology, is described. The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element...
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creator | BALLANTYNE JAMES P LAKER KENNETH R YIANNOULOS ARISTIDES A FLEISCHER PAUL E |
description | A capacitor-resistor-capacitor (CRC) element for active filter realization, which is fully integrable and compatible with MOS technology, is described. The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element is closely analogous to a depletion mode MOS field effect device, except that the channel zone 26 is doped to a level which substantially precludes conductivity modulation at the usual operating voltages. However, the doping level is such as to enable the use of the channel zone as a semiconductor resistance element. Thus, the N-channel CRC element realized in the NMOS technology comprises a first capacitance composed of the gate 27, gate dielectric 38, and resistive channel 26, paralleled by the resistive channel 26 itself constituting a resistor, and then the underlying PN junction capacitance between the N-type resistive channel 26 and the underlying P-type semiconductor body portion 21. An active low-pass filter consists of two CRC elements and an operational amplifier and utilizes the positive feedback principle. |
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The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element is closely analogous to a depletion mode MOS field effect device, except that the channel zone 26 is doped to a level which substantially precludes conductivity modulation at the usual operating voltages. However, the doping level is such as to enable the use of the channel zone as a semiconductor resistance element. Thus, the N-channel CRC element realized in the NMOS technology comprises a first capacitance composed of the gate 27, gate dielectric 38, and resistive channel 26, paralleled by the resistive channel 26 itself constituting a resistor, and then the underlying PN junction capacitance between the N-type resistive channel 26 and the underlying P-type semiconductor body portion 21. 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The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element is closely analogous to a depletion mode MOS field effect device, except that the channel zone 26 is doped to a level which substantially precludes conductivity modulation at the usual operating voltages. However, the doping level is such as to enable the use of the channel zone as a semiconductor resistance element. Thus, the N-channel CRC element realized in the NMOS technology comprises a first capacitance composed of the gate 27, gate dielectric 38, and resistive channel 26, paralleled by the resistive channel 26 itself constituting a resistor, and then the underlying PN junction capacitance between the N-type resistive channel 26 and the underlying P-type semiconductor body portion 21. An active low-pass filter consists of two CRC elements and an operational amplifier and utilizes the positive feedback principle.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1983</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD1zCtJTS9KLElNUXAOclZIy8wpSS1SSM4sSi7NLOFhYE1LzClO5YXS3Azybq4hzh66qQX58anFBYnJqXmpJfGhwSbGlpYmhuaOxoRVAAAiKSMw</recordid><startdate>19830816</startdate><enddate>19830816</enddate><creator>BALLANTYNE; JAMES P</creator><creator>LAKER; KENNETH R</creator><creator>YIANNOULOS; ARISTIDES A</creator><creator>FLEISCHER; PAUL E</creator><scope>EVB</scope></search><sort><creationdate>19830816</creationdate><title>Integrated CRC filter circuit</title><author>BALLANTYNE; JAMES P ; LAKER; KENNETH R ; YIANNOULOS; ARISTIDES A ; FLEISCHER; PAUL E</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4399417A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1983</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BALLANTYNE; JAMES P</creatorcontrib><creatorcontrib>LAKER; KENNETH R</creatorcontrib><creatorcontrib>YIANNOULOS; ARISTIDES A</creatorcontrib><creatorcontrib>FLEISCHER; PAUL E</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BALLANTYNE; JAMES P</au><au>LAKER; KENNETH R</au><au>YIANNOULOS; ARISTIDES A</au><au>FLEISCHER; PAUL E</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated CRC filter circuit</title><date>1983-08-16</date><risdate>1983</risdate><abstract>A capacitor-resistor-capacitor (CRC) element for active filter realization, which is fully integrable and compatible with MOS technology, is described. The incorporation of the CRC element in a semiconductor integrated circuit active filter also is described. The structure of the CRC filter element is closely analogous to a depletion mode MOS field effect device, except that the channel zone 26 is doped to a level which substantially precludes conductivity modulation at the usual operating voltages. However, the doping level is such as to enable the use of the channel zone as a semiconductor resistance element. Thus, the N-channel CRC element realized in the NMOS technology comprises a first capacitance composed of the gate 27, gate dielectric 38, and resistive channel 26, paralleled by the resistive channel 26 itself constituting a resistor, and then the underlying PN junction capacitance between the N-type resistive channel 26 and the underlying P-type semiconductor body portion 21. An active low-pass filter consists of two CRC elements and an operational amplifier and utilizes the positive feedback principle.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES |
title | Integrated CRC filter circuit |
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