Double polysilicon contact structure and process
A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a "polysilicon void phenomenon" is overcome by patterning an appropriate etch stop between the conductors.
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| Hauptverfasser: | , , , , , , , |
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A contact structure in a double polysilicon device is described in which direct shorts between overlying polysilicon conductors due to a "polysilicon void phenomenon" is overcome by patterning an appropriate etch stop between the conductors. |
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