X-y Infrared CCD sensor and method for making same

An x-y infrared CCD sensor employing the photoelectric effect as in a p-doped semiconductor substrate of silicon with an n+pn diode as the infrared sensor element with a three layer structure in the vertical direction in the semiconductor substrate and a n-channel charge coupled device shift registe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MADER, HERMANN, RISCH, LOTHAR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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