Nondestructive read-out dynamic memory cell

A MOSFET which is capable of being placed in two states, one of which is quasi-stable and a memory cell which includes such a device is disclosed. The device basically consists of a pair of diffusions of one conductivity type disposed in a substrate of opposite conductivity type. The channel region...

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Bibliographische Detailangaben

Hauptverfasser:	FANG, FRANK F, YU, HWA N
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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