Method of making a dual DMOS device by ion implantation and diffusion

A diffused MOS (DMOS) device and method for making same are disclosed. The prior art DMOS device is improved upon by ion implanting a depletion extension LD to the drain. However, the introduction of the depletion extension LD introduces a manufacturing statistical variation in the characteristics o...

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Bibliographische Detailangaben

Hauptverfasser:	BERTIN, CLAUDE L, DE LA MONEDA, FRANCISCO H, SODERMAN, DONALD A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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