Quadriphase integrated high-speed microwave modulator

A quadriphase modulator, designed in a planar metal geometry for operation in the microwave frequency range, uses Schottky barrier diodes as the switching elements, and is capable of operating at bit data rates up to 15% of the carrier frequency. The microwave circuit employs a microstrip power spli...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DAVIDHEISER, ROGER A
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator DAVIDHEISER
ROGER A
description A quadriphase modulator, designed in a planar metal geometry for operation in the microwave frequency range, uses Schottky barrier diodes as the switching elements, and is capable of operating at bit data rates up to 15% of the carrier frequency. The microwave circuit employs a microstrip power splitter that couples the carrier signal to two biphase modulators while providing DC isolation. Each biphase modulator includes coplanar-to-slot transmission line transition, with a pair of diodes controlling the phase shift across the transition. The diodes are connected in reverse polarity and the bias for switching the diodes is controlled by the modulating signal. The slot lines from the two biphase modulators are coupled through a microstrip transition and through a Lange 90 degree hybrid to the output load.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4276521A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4276521A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4276521A3</originalsourceid><addsrcrecordid>eNrjZDANLE1MKcosyEgsTlXIzCtJTS9KLElNUcjITM_QLS5IBTJzM5OL8ssTy1IVcvNTSnMSS_KLeBhY0xJzilN5oTQ3g7yba4izh25qQX58anFBYnJqXmpJfGiwiZG5mamRoaMxYRUA_DMtHA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Quadriphase integrated high-speed microwave modulator</title><source>esp@cenet</source><creator>DAVIDHEISER; ROGER A</creator><creatorcontrib>DAVIDHEISER; ROGER A</creatorcontrib><description>A quadriphase modulator, designed in a planar metal geometry for operation in the microwave frequency range, uses Schottky barrier diodes as the switching elements, and is capable of operating at bit data rates up to 15% of the carrier frequency. The microwave circuit employs a microstrip power splitter that couples the carrier signal to two biphase modulators while providing DC isolation. Each biphase modulator includes coplanar-to-slot transmission line transition, with a pair of diodes controlling the phase shift across the transition. The diodes are connected in reverse polarity and the bias for switching the diodes is controlled by the modulating signal. The slot lines from the two biphase modulators are coupled through a microstrip transition and through a Lange 90 degree hybrid to the output load.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; MODULATION</subject><creationdate>1981</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19810630&amp;DB=EPODOC&amp;CC=US&amp;NR=4276521A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19810630&amp;DB=EPODOC&amp;CC=US&amp;NR=4276521A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAVIDHEISER; ROGER A</creatorcontrib><title>Quadriphase integrated high-speed microwave modulator</title><description>A quadriphase modulator, designed in a planar metal geometry for operation in the microwave frequency range, uses Schottky barrier diodes as the switching elements, and is capable of operating at bit data rates up to 15% of the carrier frequency. The microwave circuit employs a microstrip power splitter that couples the carrier signal to two biphase modulators while providing DC isolation. Each biphase modulator includes coplanar-to-slot transmission line transition, with a pair of diodes controlling the phase shift across the transition. The diodes are connected in reverse polarity and the bias for switching the diodes is controlled by the modulating signal. The slot lines from the two biphase modulators are coupled through a microstrip transition and through a Lange 90 degree hybrid to the output load.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>MODULATION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1981</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANLE1MKcosyEgsTlXIzCtJTS9KLElNUcjITM_QLS5IBTJzM5OL8ssTy1IVcvNTSnMSS_KLeBhY0xJzilN5oTQ3g7yba4izh25qQX58anFBYnJqXmpJfGiwiZG5mamRoaMxYRUA_DMtHA</recordid><startdate>19810630</startdate><enddate>19810630</enddate><creator>DAVIDHEISER; ROGER A</creator><scope>EVB</scope></search><sort><creationdate>19810630</creationdate><title>Quadriphase integrated high-speed microwave modulator</title><author>DAVIDHEISER; ROGER A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4276521A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1981</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>MODULATION</topic><toplevel>online_resources</toplevel><creatorcontrib>DAVIDHEISER; ROGER A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAVIDHEISER; ROGER A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Quadriphase integrated high-speed microwave modulator</title><date>1981-06-30</date><risdate>1981</risdate><abstract>A quadriphase modulator, designed in a planar metal geometry for operation in the microwave frequency range, uses Schottky barrier diodes as the switching elements, and is capable of operating at bit data rates up to 15% of the carrier frequency. The microwave circuit employs a microstrip power splitter that couples the carrier signal to two biphase modulators while providing DC isolation. Each biphase modulator includes coplanar-to-slot transmission line transition, with a pair of diodes controlling the phase shift across the transition. The diodes are connected in reverse polarity and the bias for switching the diodes is controlled by the modulating signal. The slot lines from the two biphase modulators are coupled through a microstrip transition and through a Lange 90 degree hybrid to the output load.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US4276521A
source esp@cenet
subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
MODULATION
title Quadriphase integrated high-speed microwave modulator
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T12%3A57%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DAVIDHEISER;%20ROGER%20A&rft.date=1981-06-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS4276521A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true