Plasma development process for photoresist

After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semicon...

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Bibliographische Detailangaben
Hauptverfasser:	KELLER, JED V, HUGHES, HENRY G
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	After exposure to radiation photoresist may be developed by a dry process using a gas plasma, preferably an oxygen plasma. The process can be used for chemical milling, photolithography, printed circuit board and photomask manufacture and it is particularly advantageous in the manufacture of semiconductors. The plasma development process can be followed by plasma etch and strip processes without requiring removal of the work piece from the plasma reactor.