Device for epitaxial growing of semiconductor periodic structures from gas phase
A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor...
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| creator | VORONIN NIKOLAI GEORGIEVICH KUDEYAROVA EMILIA STANISLAVOVNA DROZDOV JURY ANATOLIEVICH MASLOV VADIM NIKOLAEVICH KOROBOV OLEG EVGENIEVICH JUSHKOV JURY VASILIEVICH DOLOMANOV LJUDVIG ALEXANDROVICH DEMYANETS VLADIMIR GRIGORIEVICH BOCHKAREV ELLIN PETROVICH GOLDIN GRIGORY BORISOVICH KHLEBNIKOV VALENTIN PETROVICH NECHAEV VLADIMIR VIKTOROVICH KUKLEV VLADIMIR PETROVICH |
| description | A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4100879A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4100879A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4100879A3</originalsourceid><addsrcrecordid>eNqFyj0KAkEMQOFpLEQ9g7mAsKKgluIPloJaL2E2MwZ2J0Myqx7fLeytHjy-sbse6cWeIIgCZS74YWwhqrw5RZAARh17SU3vy0AyKUvDHqzocHolg6DSQUSD_ESjqRsFbI1mv07c_Hy6Hy4LylKTZfSUqNSP23pZVdvNbr_6L74DOjc3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Device for epitaxial growing of semiconductor periodic structures from gas phase</title><source>esp@cenet</source><creator>VORONIN; NIKOLAI GEORGIEVICH ; KUDEYAROVA; EMILIA STANISLAVOVNA ; DROZDOV; JURY ANATOLIEVICH ; MASLOV; VADIM NIKOLAEVICH ; KOROBOV; OLEG EVGENIEVICH ; JUSHKOV; JURY VASILIEVICH ; DOLOMANOV; LJUDVIG ALEXANDROVICH ; DEMYANETS; VLADIMIR GRIGORIEVICH ; BOCHKAREV; ELLIN PETROVICH ; GOLDIN; GRIGORY BORISOVICH ; KHLEBNIKOV; VALENTIN PETROVICH ; NECHAEV; VLADIMIR VIKTOROVICH ; KUKLEV; VLADIMIR PETROVICH</creator><creatorcontrib>VORONIN; NIKOLAI GEORGIEVICH ; KUDEYAROVA; EMILIA STANISLAVOVNA ; DROZDOV; JURY ANATOLIEVICH ; MASLOV; VADIM NIKOLAEVICH ; KOROBOV; OLEG EVGENIEVICH ; JUSHKOV; JURY VASILIEVICH ; DOLOMANOV; LJUDVIG ALEXANDROVICH ; DEMYANETS; VLADIMIR GRIGORIEVICH ; BOCHKAREV; ELLIN PETROVICH ; GOLDIN; GRIGORY BORISOVICH ; KHLEBNIKOV; VALENTIN PETROVICH ; NECHAEV; VLADIMIR VIKTOROVICH ; KUKLEV; VLADIMIR PETROVICH</creatorcontrib><description>A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1978</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19780718&DB=EPODOC&CC=US&NR=4100879A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19780718&DB=EPODOC&CC=US&NR=4100879A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VORONIN; NIKOLAI GEORGIEVICH</creatorcontrib><creatorcontrib>KUDEYAROVA; EMILIA STANISLAVOVNA</creatorcontrib><creatorcontrib>DROZDOV; JURY ANATOLIEVICH</creatorcontrib><creatorcontrib>MASLOV; VADIM NIKOLAEVICH</creatorcontrib><creatorcontrib>KOROBOV; OLEG EVGENIEVICH</creatorcontrib><creatorcontrib>JUSHKOV; JURY VASILIEVICH</creatorcontrib><creatorcontrib>DOLOMANOV; LJUDVIG ALEXANDROVICH</creatorcontrib><creatorcontrib>DEMYANETS; VLADIMIR GRIGORIEVICH</creatorcontrib><creatorcontrib>BOCHKAREV; ELLIN PETROVICH</creatorcontrib><creatorcontrib>GOLDIN; GRIGORY BORISOVICH</creatorcontrib><creatorcontrib>KHLEBNIKOV; VALENTIN PETROVICH</creatorcontrib><creatorcontrib>NECHAEV; VLADIMIR VIKTOROVICH</creatorcontrib><creatorcontrib>KUKLEV; VLADIMIR PETROVICH</creatorcontrib><title>Device for epitaxial growing of semiconductor periodic structures from gas phase</title><description>A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1978</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFyj0KAkEMQOFpLEQ9g7mAsKKgluIPloJaL2E2MwZ2J0Myqx7fLeytHjy-sbse6cWeIIgCZS74YWwhqrw5RZAARh17SU3vy0AyKUvDHqzocHolg6DSQUSD_ESjqRsFbI1mv07c_Hy6Hy4LylKTZfSUqNSP23pZVdvNbr_6L74DOjc3</recordid><startdate>19780718</startdate><enddate>19780718</enddate><creator>VORONIN; 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BOCHKAREV; ELLIN PETROVICH ; GOLDIN; GRIGORY BORISOVICH ; KHLEBNIKOV; VALENTIN PETROVICH ; NECHAEV; VLADIMIR VIKTOROVICH ; KUKLEV; VLADIMIR PETROVICH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4100879A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1978</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>VORONIN; NIKOLAI GEORGIEVICH</creatorcontrib><creatorcontrib>KUDEYAROVA; EMILIA STANISLAVOVNA</creatorcontrib><creatorcontrib>DROZDOV; JURY ANATOLIEVICH</creatorcontrib><creatorcontrib>MASLOV; VADIM NIKOLAEVICH</creatorcontrib><creatorcontrib>KOROBOV; OLEG EVGENIEVICH</creatorcontrib><creatorcontrib>JUSHKOV; JURY VASILIEVICH</creatorcontrib><creatorcontrib>DOLOMANOV; LJUDVIG ALEXANDROVICH</creatorcontrib><creatorcontrib>DEMYANETS; VLADIMIR GRIGORIEVICH</creatorcontrib><creatorcontrib>BOCHKAREV; ELLIN PETROVICH</creatorcontrib><creatorcontrib>GOLDIN; GRIGORY BORISOVICH</creatorcontrib><creatorcontrib>KHLEBNIKOV; VALENTIN PETROVICH</creatorcontrib><creatorcontrib>NECHAEV; VLADIMIR VIKTOROVICH</creatorcontrib><creatorcontrib>KUKLEV; VLADIMIR PETROVICH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VORONIN; NIKOLAI GEORGIEVICH</au><au>KUDEYAROVA; EMILIA STANISLAVOVNA</au><au>DROZDOV; JURY ANATOLIEVICH</au><au>MASLOV; VADIM NIKOLAEVICH</au><au>KOROBOV; OLEG EVGENIEVICH</au><au>JUSHKOV; JURY VASILIEVICH</au><au>DOLOMANOV; LJUDVIG ALEXANDROVICH</au><au>DEMYANETS; VLADIMIR GRIGORIEVICH</au><au>BOCHKAREV; ELLIN PETROVICH</au><au>GOLDIN; GRIGORY BORISOVICH</au><au>KHLEBNIKOV; VALENTIN PETROVICH</au><au>NECHAEV; VLADIMIR VIKTOROVICH</au><au>KUKLEV; VLADIMIR PETROVICH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Device for epitaxial growing of semiconductor periodic structures from gas phase</title><date>1978-07-18</date><risdate>1978</risdate><abstract>A device in which a reaction vessel is filled with a gas, and in which first and second equal and coaxial disks are located. They have parallel operational surfaces carrying respectively, at least one substrate and at least two sources of different semiconductor substances forming the semiconductor periodic structure. A substrate heater and a source heater are placed near the first and second disks, respectively. First and second electric motors are arranged outside the reaction vessel in order to rotate, respectively, the first and second disks about the vessel vertical axis, as well as a drive to shift one of the disks along the axis.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Device for epitaxial growing of semiconductor periodic structures from gas phase |
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