Method of forming metal hydride films

There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a v...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ALGER, DONALD L, COOPER, DALE W, STEINBERG, ROBERT
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ALGER
DONALD L
COOPER
DALE W
STEINBERG
ROBERT
description There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US4055686A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US4055686A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US4055686A3</originalsourceid><addsrcrecordid>eNrjZFD1TS3JyE9RyE9TSMsvys3MS1fITS1JzFHIqEwpykxJVUjLzMkt5mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBJgampmYWZo7GhFUAAJUnJlk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method of forming metal hydride films</title><source>esp@cenet</source><creator>ALGER; DONALD L ; COOPER; DALE W ; STEINBERG; ROBERT</creator><creatorcontrib>ALGER; DONALD L ; COOPER; DALE W ; STEINBERG; ROBERT</creatorcontrib><description>There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CONVERSION OF CHEMICAL ELEMENTS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; NUCLEAR ENGINEERING ; NUCLEAR PHYSICS ; PHYSICS ; RADIOACTIVE SOURCES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><creationdate>1977</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19771025&amp;DB=EPODOC&amp;CC=US&amp;NR=4055686A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19771025&amp;DB=EPODOC&amp;CC=US&amp;NR=4055686A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ALGER; DONALD L</creatorcontrib><creatorcontrib>COOPER; DALE W</creatorcontrib><creatorcontrib>STEINBERG; ROBERT</creatorcontrib><title>Method of forming metal hydride films</title><description>There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CONVERSION OF CHEMICAL ELEMENTS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>NUCLEAR ENGINEERING</subject><subject>NUCLEAR PHYSICS</subject><subject>PHYSICS</subject><subject>RADIOACTIVE SOURCES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1977</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD1TS3JyE9RyE9TSMsvys3MS1fITS1JzFHIqEwpykxJVUjLzMkt5mFgTUvMKU7lhdLcDPJuriHOHrqpBfnxqcUFicmpeakl8aHBJgampmYWZo7GhFUAAJUnJlk</recordid><startdate>19771025</startdate><enddate>19771025</enddate><creator>ALGER; DONALD L</creator><creator>COOPER; DALE W</creator><creator>STEINBERG; ROBERT</creator><scope>EVB</scope></search><sort><creationdate>19771025</creationdate><title>Method of forming metal hydride films</title><author>ALGER; DONALD L ; COOPER; DALE W ; STEINBERG; ROBERT</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US4055686A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1977</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CONVERSION OF CHEMICAL ELEMENTS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>NUCLEAR ENGINEERING</topic><topic>NUCLEAR PHYSICS</topic><topic>PHYSICS</topic><topic>RADIOACTIVE SOURCES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS</topic><toplevel>online_resources</toplevel><creatorcontrib>ALGER; DONALD L</creatorcontrib><creatorcontrib>COOPER; DALE W</creatorcontrib><creatorcontrib>STEINBERG; ROBERT</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ALGER; DONALD L</au><au>COOPER; DALE W</au><au>STEINBERG; ROBERT</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of forming metal hydride films</title><date>1977-10-25</date><risdate>1977</risdate><abstract>There is disclosed a method of forming a continuous, thin film of stoichiometric metal hydride such as titanium dihydride, titanium dideuteride, or titanium ditritide on a substrate which may be of metal, glass or the like. The substrate is first cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system vapor deposition by a sublimator or vaporizer first coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US4055686A
source esp@cenet
subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOUNDS THEREOF
CONVERSION OF CHEMICAL ELEMENTS
DIFFUSION TREATMENT OF METALLIC MATERIAL
GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
NUCLEAR ENGINEERING
NUCLEAR PHYSICS
PHYSICS
RADIOACTIVE SOURCES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TECHNICAL SUBJECTS COVERED BY FORMER USPC
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS
title Method of forming metal hydride films
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-21T14%3A35%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ALGER;%20DONALD%20L&rft.date=1977-10-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS4055686A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true