Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin and has a relatively narrow bandgap, and the p...
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| creator | LOGAN RALPH ANDRE REINHART FRANZ KARL |
| description | Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin and has a relatively narrow bandgap, and the passive zone is thicker and has a wider bandgap. The transition in thickness and bandgap between zones is relatively gradual. Also described is a monolithic integrated circuit including a DH laser and a DH modulator which have such an intermediate layer in common. In addition, described is an LPE growth technique for fabricating the intermediate layer in which two solutions, used to grow simultaneously zones of different composition, are placed on opposite sides of a partition which bifurcates one of the wells of the growth apparatus. The passive zone grows under the partition. In order to reduce mixing between the solutions, a pair of saturating seeds, separated by a divider which is aligned with the partition, are used to bring the bottoms of the two solutions to saturation. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US3993963A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US3993963A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US3993963A3</originalsourceid><addsrcrecordid>eNqFjLsKwkAQRdNYiPoNzgdoFRBSiijp1TqMu7MPkuyGndmAtv64idjb3BeHuyzeNQmlyJKykpwINI1eEe8AofPWCdjstQ8WOnxSAofjXFQM4m2OmeEVAzFEA9obQ4mCgDiv2mllwKDhMYnF4Zt7Ehf1TPfYzkeMPa2LhcGOafPzVbG9nG-nek9DbIgHVBRImvu1rKqyOpTH8j_xAVPHSgY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same</title><source>esp@cenet</source><creator>LOGAN; RALPH ANDRE ; REINHART; FRANZ KARL</creator><creatorcontrib>LOGAN; RALPH ANDRE ; REINHART; FRANZ KARL</creatorcontrib><description>Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin and has a relatively narrow bandgap, and the passive zone is thicker and has a wider bandgap. The transition in thickness and bandgap between zones is relatively gradual. Also described is a monolithic integrated circuit including a DH laser and a DH modulator which have such an intermediate layer in common. In addition, described is an LPE growth technique for fabricating the intermediate layer in which two solutions, used to grow simultaneously zones of different composition, are placed on opposite sides of a partition which bifurcates one of the wells of the growth apparatus. The passive zone grows under the partition. In order to reduce mixing between the solutions, a pair of saturating seeds, separated by a divider which is aligned with the partition, are used to bring the bottoms of the two solutions to saturation.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1976</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19761123&DB=EPODOC&CC=US&NR=3993963A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19761123&DB=EPODOC&CC=US&NR=3993963A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LOGAN; RALPH ANDRE</creatorcontrib><creatorcontrib>REINHART; FRANZ KARL</creatorcontrib><title>Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same</title><description>Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin and has a relatively narrow bandgap, and the passive zone is thicker and has a wider bandgap. The transition in thickness and bandgap between zones is relatively gradual. Also described is a monolithic integrated circuit including a DH laser and a DH modulator which have such an intermediate layer in common. In addition, described is an LPE growth technique for fabricating the intermediate layer in which two solutions, used to grow simultaneously zones of different composition, are placed on opposite sides of a partition which bifurcates one of the wells of the growth apparatus. The passive zone grows under the partition. In order to reduce mixing between the solutions, a pair of saturating seeds, separated by a divider which is aligned with the partition, are used to bring the bottoms of the two solutions to saturation.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1976</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFjLsKwkAQRdNYiPoNzgdoFRBSiijp1TqMu7MPkuyGndmAtv64idjb3BeHuyzeNQmlyJKykpwINI1eEe8AofPWCdjstQ8WOnxSAofjXFQM4m2OmeEVAzFEA9obQ4mCgDiv2mllwKDhMYnF4Zt7Ehf1TPfYzkeMPa2LhcGOafPzVbG9nG-nek9DbIgHVBRImvu1rKqyOpTH8j_xAVPHSgY</recordid><startdate>19761123</startdate><enddate>19761123</enddate><creator>LOGAN; RALPH ANDRE</creator><creator>REINHART; FRANZ KARL</creator><scope>EVB</scope></search><sort><creationdate>19761123</creationdate><title>Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same</title><author>LOGAN; RALPH ANDRE ; REINHART; FRANZ KARL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US3993963A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1976</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>LOGAN; RALPH ANDRE</creatorcontrib><creatorcontrib>REINHART; FRANZ KARL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LOGAN; RALPH ANDRE</au><au>REINHART; FRANZ KARL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same</title><date>1976-11-23</date><risdate>1976</risdate><abstract>Described is a double heterostructure (DH) junction laser in which the intermediate layer in which light is guided is composed of an active and a passive zone which are disposed in tandem along the direction of light propagation. The active zone is thin and has a relatively narrow bandgap, and the passive zone is thicker and has a wider bandgap. The transition in thickness and bandgap between zones is relatively gradual. Also described is a monolithic integrated circuit including a DH laser and a DH modulator which have such an intermediate layer in common. In addition, described is an LPE growth technique for fabricating the intermediate layer in which two solutions, used to grow simultaneously zones of different composition, are placed on opposite sides of a partition which bifurcates one of the wells of the growth apparatus. The passive zone grows under the partition. In order to reduce mixing between the solutions, a pair of saturating seeds, separated by a divider which is aligned with the partition, are used to bring the bottoms of the two solutions to saturation.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same |
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